Single frequency electrically injected semiconductor laser exploiting the concept of Parity-Time symmetry - Institut d'Optique Graduate School
Communication Dans Un Congrès Année : 2021

Single frequency electrically injected semiconductor laser exploiting the concept of Parity-Time symmetry

Résumé

The progress of nanotechnologies has triggered the emergence of many photonic artificial structures: photonic crystals, metamaterials, plasmonic resonators. Recently the intriguing class of PT-symmetric devices– referring to Parity-Time symmetry – has attracted much attention. Their distinctive feature is that the refractive index profile of the structures is complex-valued due to the gain and/or loss, which are spatially separated in the system. One characteristic for PT-symmetry in optics functionality is the “spatial non reciprocity” or “unidirectionality” distinctly different from that based on the Faraday magneto-optical effect. In the case of a PT-symmetric Bragg grating waveguide the reflectivity can be extremely low in a broadband wavelength range for light incident from one side, and extremely high in a narrow band when light is incident from the opposite side. Due to the narrow-band “unidirectional” reflection of PT-symmetric Bragg grating introducing an additional gain discrimination mechanism, it is expected that the coherence of such a laser would be highly tolerant with respect to the optical feedback i.e. reflections along the optical path. In this work we report on the implementation of single frequency electrically injected DFB lasers based on Parity-Time symmetric dual gratings in a standard ridge waveguide configuration. We demonstrate enhanced modal discrimination for these devices as compared with index or gain coupled ones, fabricated in the same technology run. Optical transmission probing experiments further show asymmetric amplification in the light propagation confirming the Parity-Time symmetry signature of unidirectional light behavior. Another asset of these complex coupled devices is further highlighted in terms of robustness to optical feedback
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Dates et versions

hal-04481312 , version 1 (28-02-2024)

Identifiants

  • HAL Id : hal-04481312 , version 1

Citer

Vincent Brac de La Perriere, Quentin Gaimard, Henri Benisty, Abderrahim Ramdane, Anatole Lupu. Single frequency electrically injected semiconductor laser exploiting the concept of Parity-Time symmetry. Nonlinear Dynamics in Semiconductor Lasers 2021, Jun 2021, Berlin (Germany), Germany. ⟨hal-04481312⟩
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