Dual-frequency operation of a vertical external-cavity semiconductor laser at 852 nm
Abstract
We demonstrate the dual-‐frequency emission of a diode-‐pumped vertical external-‐cavity semiconductor laser operating at 852 nm, dedicated to the coherent population trapping of cesium atoms. It is based on a single laser cavity sustaining the oscillation of two adjacent, orthogonally-polarized, modes. Two coherent laser lines distant from a few GHz are obtained in a simple and compact configuration. Up to 20 mW has been achieved at each frequency.