Extracting edge conduction around threshold in mesa-isolated SOI MOSFETs - CMNE
Journal Articles Solid-State Electronics Year : 2023

Extracting edge conduction around threshold in mesa-isolated SOI MOSFETs

Abstract

This work proposes a methodology to decompose the center and edge current contributions around threshold in mesa-isolated SOI MOSFETs using 3D TCAD simulations. Applied to pMOS measurements, it reveals that the subthreshold regime is driven by the active edge, whatever the device width. It also explains why the threshold voltage modulation by the back-gate bias depends on the device width, as well as why these effects are worse for high channel doping values.
Fichier principal
Vignette du fichier
SSE_vf_reviewed_wohighlights.pdf (1.77 Mo) Télécharger le fichier
Origin Files produced by the author(s)

Dates and versions

hal-04305958 , version 1 (24-11-2023)

Identifiers

Cite

A. Boutayeb, Christoforos Theodorou, D. Golanski, P. Batude, L. Brunet, et al.. Extracting edge conduction around threshold in mesa-isolated SOI MOSFETs. Solid-State Electronics, 2023, 209, pp.108736. ⟨10.1016/j.sse.2023.108736⟩. ⟨hal-04305958⟩
116 View
118 Download

Altmetric

Share

More