Drain Current Variability in 2-levels Stacked Nanowire Gate All Around P-type Field Effect Transistors
Résumé
An experimental study of drain current statistical characteristics in two vertically stacked nanowire MOSFETs (bottom one: Omega shaped and top one: nanowire) is presented. The most critical parameter variations are identified using an advanced mismatch model that well describes the experimental results, while the impact of channel geometry is examined for every source of process variations.
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